Abstract
Indium aluminum tin oxide (IATO) films with high Hall mobility have been deposited on the SiO2 (0001) substrates by metal organic chemical vapor deposition. The structural, morphological, and optoelectronic properties of the IATO films with Sn contents varied from 0 to 18 % [Sn/(In+Al+Sn) atomic ratio] were studied in detail. Well-crystallized IATO film with the highest Hall mobility of 15.59 cm2 V−1 s−1 was obtained at 15 % of Sn content, and the corresponding carrier concentration and resistivity were about 2.38 × 1020 and 1.51 × 10−3 Ω cm, respectively. The average transmittance for all the obtained films in the visible range was over 81 %, and the optical band gap of the films changed in the range of 4.05–5.03 eV.
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