Abstract
Two kinds of In2O3 nanowires (NWs), i.e., straight and tapered ones, are grown from 20-nm-thick Au∕300-nm-thick In and 20-nm-thick Au∕1-μm-thick In films on glass at 400°C by a one-step annealing method, respectively. All the NWs are single crystalline. The growth of the NWs is initiated by Au catalyst particles via vapor-liquid-solid growth mechanism, and an additional side growth might be responsible for the nonuniform diameters of the tapered NWs. It is revealed that a certain content of oxygen in the In film facilitates the large-scale growth of the In2O3 NWs. The field-emission studies show that the In2O3 NWs on glass have a low turn-on electric field of about 4.3V∕μm. Our growth method has potential applications in the in situ fabrication and integration of the In2O3 NWs-based devices, especially with glass as substrates.
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