Impurity Wave Function and Alloy Broadening of Impurity-Related Luminescence

Abstract

By performing state-of-art ckputations of the acceptor wave func- tions in GaAs we show that the linewidth of the conduction band to ac- ceptor luminescence increases more than qu^adratically with the increase in the binding energy. This proves that study of the fluctuation broadening of the impurity-related emission in semiconductor alloys may provide a critical test for theories claiming realistic impurity wave function computation. The theoretical results are compared with the experimental data for high purity p-type AlGaAs alloys.