Abstract
AbstractThe effect of uniaxial deformation along cubic axis on the states of point defects in narrow‐gap semiconductors is studied. The energy dependence of the splitting of deep h‐states into two doubly degenerate h1 and h2 states on the deformation value and the semiconductor characteristics is calculated. Changes of optical transitions from deep 1‐c and h‐centres with deformation are also examined. It is shown, that the absorption coefficient in this case is essentially anisotropic and its spectral dependences essentially differ from those in the case without deformation.
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