Abstract
During the formation of silicon-on-insulator substrates by high-dose oxygen implantation, the fixturing in the ion implanter may be sputtered onto the substrate by the oxygen beam. Large densities of heavy metal contaminants are introduced into the top silicon film and buried oxide, and remain there during epitaxial layer growth and device fabrication. These contaminants can form deep level traps by complexing with boron or oxygen, precipitate out in the gate oxide surface, remain interstitially or substitutionally in the top silicon layer, and/or decorate dislocations. A correlation is shown between the microstructure and defects, and the distribution of undesired impurities in the oxygen-implanted silicon-on-insulator substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
