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Abstract
We investigated low-temperature photoluminescence from p-type Al 1− x Ga x As/GaAs heterostructures. Our measurements show that at low laser power the H-band emission disappears and is replaced by a line resulting from the recombination of donor-bound electrons with two-dimensional holes. The properties of both lines are explained based on the results of detailed band structure calculations. Measurements in magnetic fields enabled us to examine the binding energy of donor in parallel electric and magnetic fields.
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