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Abstract
We investigated low-temperature photoluminescence from p-type Al 1− x Ga x As/GaAs heterostructures subjected to a magnetic field directed perpendicularly to the interface. Two observed type of structure related to interface transitions were interpreted as free (H-band) and donor-bound (D-line) electron recombinations with 2D holes. Properties of both type of structure were explained basing on the results of detailed band-structure calculations. Magnetic field measurements enabled us to examine the binding energy of donor screened by 2D holes in parallel electric and magnetic fields.
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