Abstract
In the process of growing an oxide on doped silicon, electrically active impurities near the silicon/silicon dioxide interface are redistributed according to the diffusion coefficients and the distribution coefficient of the impurity between the oxide and the semiconductor. An analysis of the phenomenon predicts that single-junction or two-junction material can be obtained by oxidation of the surface of a compensated silicon crystal. For parabolic growth of the oxide, the surface concentration is independent of time, and the junction depth, gradient and sheet resistivity vary with t <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> . This has been demonstrated experimentally by oxidation of a compensated p-type silicon crystal doped with gallium and antimony.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
