Abstract
Impurity photoconductivity spectra in the range 0.5–1.5 eV are studied in epitaxial layers of n-GaAs grown on substrates of semiconductive GaAs withρ > 106 Ω·cm in the system Ga-AsCl3 -H2. The effect of uncontrolled acceptor impurities on the impurity photoconductivity spectrum is evaluated.
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