Abstract
A new theoretical method for calculation of acceptor energy spectra in Si/SiGe quantum well heterostructures, taking into account the anisotropy effects has been developed. The impurity photoconductivity spectra in strained SiGe/Si:B quantum well heterostructures have been studied experimentally. In addition to the photoconductivity band resulting from the photoionization of boron acceptors in the bulk Si a new low-frequency band has been discovered. According to the calculation results the low-frequency band is attributed to the photoexcitation of acceptors in SiGe quantum wells.
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