Abstract
Single crystals of SbSeI:Ni were grown by the Bridgman technique. The impurity optical absorption spectra of these single crystals were investigated at room temperature. We observed impurity optical absorption peaks at 4334, 7763, 8857, 8952, and 11 587 cm−1 due to nickel impurity. These impurity optical absorption peaks are assigned to the electronic transitions from the ground state 3T1(3F) to the excited states 3T2(3F), 3A2(3F), 1T2(1D), 1E(1D), and 3T1(3P) of Ni2+ ions sited at Td symmetry of the SbSeI host lattice.
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