Abstract
Single crystals of SbSI and SbSI: Ni were grown by the Bridgman technique. The optical absorption spectra of these single crystals were investigated, and also the electronic states of nickel impurity in the SbSI: Ni single crystal were identified. We observed the impurity absorption peaks at 4502, 7770, 8904, 9090, 12 180 and 14 598 cm −1 due to the electron transitions between the energy levels of Ni 2+ ions sited at T d symmetry of SbSI host lattice. The crystal field parameter and the Racah parameter are given by Dq = 327 and B = 663 cm −1, respectively.
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