Abstract
119Sn Mossbauer Spectroscopy has been applied to study the nearest environment of radioactive119mTe and119Sb atoms implanted into GaAs. After a low-dose implantation and annealing above 300°C the impurity atoms are found at As sites. High-dose implantation and annealing above 600°C results in the population of at least two additional sites; these are clearly different for Te and Sb. No evidence is found for the population of DX-centres. A likely possibility is the formation of coherent Ga2Te3 precipitates.
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