Abstract
We consider the electronic properties of impure narrow band magnetic semiconductors, using the Hubbard model for nearly half filled bands in the strong correlation limit. We examine the dependence of the impurity self-energy on the magnetic configuration of the host. We find the energy and range dependence of the ferromagnetic coupling induced by the impurity bound state. The results are related to experiments in Ca doped LaMn03 and In doped CdCr2Se,. The relevance of the mathematical methods we use to problems dealing with vacancy impurity interactions in conventional semiconductors is discussed in the Appendix.
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