Abstract
ABSTRACTCapability of impurity gettering by thin polycrystalline films on the backside of silicon wafer was evaluated by minority-carrier diffusion length. Cu was gettered easily during usual cooling after high temperature annealing. On the other hand, intentional slow cooling or low temperature annealing was necessary for effective Fe gettering. The gettering efficiency for Fe increased with lowering the annealing temperature when Fe was diffused sufficiently. From the quantitative consideration of Fe gettering, we propose the model of impurity gettering based on the chemical equilibrium of impurity reaction in polysilicon films. It was also expected that gettering efficiency increased with the thickness of polysilicon film.
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