Abstract
Impurity-free disordering (IFD) of the InAs quantum dots (QDs) capped with either an InP layer or an InGaAs∕InP bilayer is studied. The samples are coated with a SiO2 or TiO2 dielectric layer followed by rapid thermal annealing at 700, 750, 800, and 850°C for 30s. A large differential energy shift of 157meV is induced by SiO2 in the QDs capped with an InGaAs∕InP bilayer. Contrary to the reported results on the suppression of intermixing of GaAs based QDs by TiO2, the authors find that intermixing of InAs∕InP QDs is promoted by TiO2. X-ray photoelectron spectroscopy depth profiles show that both In and P outdiffuse to a TiO2 layer whereas Ga, In, and P outdiffuse to a SiO2 layer leading to different degrees of intermixing. The results indicate that a group V interstitial diffusion mechanism might be responsible for IFD of InAs∕InP QDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
