Impurity effect on low-temperature polarisation of the charge-density-waves in o-TaS 3

Abstract

The temperature dependence of the low-temperature dielectric response is studied in o-TaS 3 samples doped by Nb, Se, and Ni and for nominally pure ones. It is found that the low-temperature dielectric constant depends anomalously on doping and is higher for doped crystals, whereas the temperature dependence of the characteristic time of all samples follows the activation law with nearly the same activation energy ∼400 K ( T > 20 K). The observed behaviour is inconsistent with all available explanations of the low-temperature dielectric anomaly.