Abstract
Measurements of impurity conduction in transmutation-doped germanium have been made in the temperature range 1.5–6 K during the radioactive decay of the electrically active products. Because the decay constant for the acceptor impurity is different than those for the donor impurities the compensation ratio, as well as the impurity concentration, changes continuously. After initial annealing to heal the damage caused by slow neutron capture, resistivity vs 1/T measurements were made for several samples beginning 11 days after irradiation and continuing until the radioactive decay was essentially complete. For a typical sample the gallium concentration increased from about 1015 to 1016 atoms/cm3 with a corresponding compensation ratio of about 0.5–0.26. Values of resistivity and activation energy determined are in good agreement with previously measured values indicating that effects due to the radioactive decay do not appreciably change the conductivity of the samples in the range 1.5–6.0 K.
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