Abstract
Measurements of resistivity in transmutation-doped germanium have been made in the temperature range 1.5–4.2 K during the decay of the electrically active products, thus providing experimental values for the resistivity over an essentially continuously varying range of impurity concentration and compensation ratio. From these values an expression for resistivity as a function of impurity concentration, compensation ratio, activation energy, and temperature has been developed which adequately describes the experimental results of this work as well as those of others.
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