Abstract
A new method is proposed for determining the separate concentrations of acceptor and donor impurities in crystals of p-type silicon, and thereby the degree of compensation of acceptors by donors. The method involves finding the total concentration of impurities in a sample from a measurement of the weak-field transverse magnetoresistance at 77°K and combining this result with the excess of acceptors over donors determined from a room-temperature resistivity or Hall effect measurement. An empirical ``master curve'' of magnetoresistance vs impurity density has been constructed for this purpose. The impurity densities for the master curve were measured by the usual method of fitting a theoretical carrier concentration vs temperature equation to an experimental curve obtained from Hall effect data.
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