Abstract
AbstractThe previously reported transport properties data of the undoped ZnSnAs2 grown on semi‐insulating InP substrates by molecular beam epitaxy (MBE) have been reviewed and analysed. We have found out that the temperature dependence of Hall coefficient and resistivity can be well explained by the impurity band model proposed by Isomura and Tomioka. By using the said model, we were able to resolve the experimentally obtained carrier concentration pexp and mobility μexp into valence band carrier concentration pv with mobility μv and acceptor band carrier concentration pa with mobility μa. The computed apparent values papp and μapp are in good agreement with pexp and μexp, respectively. To support the validity of the model, we also have confirmed the presence at low temperatures of negative magnetoresistance expected if impurity band conduction is predominant. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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