Development of Si:As impurity band conduction (IBC) detectors for mid-infrared applications

Abstract

Si:As Impurity Band Conduction (IBC) detectors offer many significant advantages over other conventional photon detectors utilized for the infrared. SiAs offer excellent spectral response out to 28 μm with dark current in the 0.01e/second range at 7K over a wide bias range with no tunneling limitations. In addition, because of the perfect thermal match between the Si:As IBC detector and the readout IC (ROIC), hybrids formed by mating Si:As IBCs and ROICs are mechanically stable and have no hybrid reliability problems. Since Si:As IBC detectore are fabricated on readily available Si substrates, large formats are realizable. Si:As IBC detectors have been under development since the mid 80's at Raytheon Vision Systems (RVS). Under the NSAS SIRTF program, a 256 x 256 Si:As array was developed and successfully integrated into the SIRTF IRAC instrument. This same array is also utilized in the ASTRO-F IRC instrument. Both missions will be launched shortly and provide a significant improvement in our ability to measure the spectral signatures of solar type stars and galaxies at high redshifts under very low background conditions in space. Under the NASA Origins program, in collaboration with NASA Ames Research Center (ARC), RVS developed a high performance 1024 x 1024 Si:As IBC array. This array was tested at Ames Research Center. This paper will review the progress of Si:As IBC development at RVS, present test data from ARC, and discuss the more recent developments in Si:As IBC detectors for the JWST MIRI instrument and future missions such as SPICA, TPF, FIRST and DARWIN.