Impurity and point defect redistribution in the presence of crystal defects

Abstract

A critical review of point-defect diffusion models and formalisms for the present requirements of deep submicron silicon technologies is presented. Dual-diffusion and pair-diffusion models have been discussed and derived from different ansatzes. Experimental evidence of phosphorus dopant up-hill diffusion in the vicinity of a locally damaged crystal region and extensive simulations of this phenomenon based on the pair-diffusion model have been presented. It is shown that the experimentally measured profiles displaying dopant up-hill diffusion allow quite reliable extraction of parameters governing the coupled dopant and point-defect dynamics. On a more fundamental level of master equation, a particular case of which the transition frequency is a function of the final state properties was analyzed. Such dependence appears to have a bearing on the modeling of stress dependent diffusion and possibly on diffusion at very high concentration. >