Numerical analysis for transient point defect behavior in Czochralski silicon crystal growth

Abstract

r− To study the transient point defect distribution in Czochralski-grown silicon single crystals, a contin- uum model of point defect dynamics to predict the concentrati on of interstitial and vacancy is established by estimating expressions for the thermo-physical properties of point defect s and the point defect distribution in silicon crystals. It is well known that the concentration of intrinsic point def ects in growing silicon crystals is a function of the crystal pull rate (V) and the temperature gradient (G) at the solid ification interface inside the crystal, and steady state predictions from point defect dynamics are well agreed with experiment. In this study, finite element simulations have been performed for the growth halt experiment with 150 mm silicon single crystals to study the transient behavior of intrinsic point defects. It has been demonstrated that predicted point defect distributions are in good agreement with experimental results.