Improving the short wavelength response of the multi-crystalline silicon solar cell by using 10% Erbium doped ZnS nanoparticle-based downshifting layer

Abstract

This study describes how a polymer/ZnS composite layer with antireflection, scattering, and downshifting properties improved the short wavelength response of multi-crystalline silicon (mc-Si) solar cells. The downshifting layer is made up of 10% erbium-doped ZnS nanoparticles that are dispersed in a PMMA matrix at concentrations ranging from 1 mg/ml to 10 mg/ml and applied by spin coating to the front surface of an mc-Si solar cell. The chemical route method is used to create the 10% erbium-doped ZnS NP. XRD, SEM, UV–Vis, and PL techniques are used to identify the synthesized NP. EQE, IQE, reflectance, and J-V measurement serve as distinguishing characteristics for mc-Si solar cells with and without a downshifting layer. The cubic structure of the nanoparticle has been confirmed by the XRD pattern of 10% erbium-doped ZnS NP. The spherical shape of the nanoparticle was visible in the SEM image. The nanoparticle's ability to absorb high-energy photons and release low-energy photons that met the downshifting requirement was confirmed by the UV–Vis and PL spectra. Solar cells with a downshifting layer expose their EQE spectra to enhance their UV response at short wavelengths. Both EQE and J-V measurements are used to calculate the short circuit current density. In the EQE and J-V measurements, it differs from the bare one by 4.76% and 3.57%, respectively. The short circuit current density has confirmed that the 3 mg/ml amount of ZnS:10 %Er NP/PMMA used as a downshifting layer in this study is the right concentration to improve the short wavelength response when applied to the top surface of the mc-Si solar cell.