Abstract
Thin-film transistors (TFTs) are fabricated with a tin oxide channel deposited by using ultralow pressure sputtering (ULPS). The effect of sputtering pressure on the device performance of the tin oxide TFTs was investigated. The TFTs with tin oxide channel deposited by conventional sputtering pressure did not show a promising performance. However, the saturation mobility and the threshold voltage of the ULPS-deposited TFTs were improved to and , respectively. The better device performance of the ULPS-deposited TFT was attributed to the reduced free electron density resulting from the formation of a nanocrystalline phase.
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