Abstract
Thin-film transistors (TFTs) are fabricated with a tin oxide channel deposited by using ultralow pressure sputtering (ULPS). The effect of sputtering pressure on the device performance of the tin oxide TFTs was investigated. The TFTs with tin oxide channel deposited by conventional sputtering pressure did not show a promising performance. However, the saturation mobility and the threshold voltage of the ULPS-deposited TFTs were improved to and , respectively. The better device performance of the ULPS-deposited TFT was attributed to the reduced free electron density resulting from the formation of a nanocrystalline phase.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
