Abstract
AlGaInP laser diodes (LDs) with and without the post SiO2 deposition thermal annealing process have been fabricated. It was found that we could reduce threshold current (Ith) and achieve higher values of slope efficiency (SE) and external quantum efficiency of the LDs by introducing such a post SiO2 deposition thermal annealing process. Characteristic temperature (To) observed from the LDs with the post SiO2 deposition thermal annealing process was also found to be higher.
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