Abstract
GaN-based light-emitting diodes (LEDs) fabricated with Ag particles embedded within a SiO2 current blocking layer (CBL) are demonstrated. The Ag particles varied from 100 to 250nm in size, and had a density of ∼3.8×108cm−2. The transmittances obtained from GaN/sapphire and Ag particles/GaN/sapphire were 75 and 66% at 450nm, respectively. The LEDs (chip size: 1000×1000μm2) fabricated with ITO-only, ITO/SiO2 CBL, and ITO/Ag particles/SiO2 CBL showed forward-bias voltages of 3.05, 3.25 and 3.1V at 20mA, respectively. The LEDs with the ITO/Ag particles/SiO2 CBL yielded 11.9 and 7.0% higher light output powers (at 20mA) than the LEDs with the ITO-only and ITO/SiO2 CBL, respectively. The improved output power is explained by the combined effects of the improved extraction and current spreading.
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