Abstract
Amorphous silicon oxycarbonitride thin films were synthesized on polyethylene terephthalate (PET) substrates at low temperatures (∼80 °C) by plasma-enhanced chemical vapor deposition (PECVD). A high ion flux and suitable nitrogen flow rate improved the gas barrier properties and deposition rate of the resulting a-SiOxCyNz film. The a-SiOxCyNz films were deposited at a high deposition rate and low water WVTR properties as a result of the high ion flux and nitrogen chemistry. The high ion flux modified the chemical structure and nitrogen atomic composition of the resulting a-SiOxCyNz film coatings. The substrate temperature was characterized using a thermometer. In addition, the coating properties were characterized by Fourier transform infrared (FT-IR), X-ray photoelectron spectroscopy (XPS) and the water vapor transmission rate (WVTR).
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