Abstract
Improving the endurance performance for hafnia-based ferroelectric thin films and devices is of considerable significance from both scientific and technological perspectives. Here, we obtained robust ferroelectricity in Hf0.5Zr0.5O2 (HZO) thin films without the need of the confinement from top electrodes by systematically optimizing the conditions and parameters for the post-deposition annealing (PDA) process. Compared with the post-metallization annealing (PMA) process, PDA is found to markedly improve the ferroelectric endurance performance. In particular, wake-up-free ferroelectric HZO thin films with an exceptional endurance performance (∼3 × 1010 cycles) are obtained by PDA processing conducted under an oxygen atmosphere, which is attributed to the suppression of oxygen deficiency in the HZO thin films and the inhibition of interfacial reaction layer that inevitably forms during annealing treatment for PMA processing. Our work offers insight into improving ferroelectricity and endurance for hafnia-based ferroelectric materials and devices.
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