Abstract
A modified shift-and-ratio (MS&R) method of extracting the effective channel length (Leff) has been tested on metal oxide semiconductor (MOS) transistors fabricated by state-of-the-art CMOS technology. The value of Leff generated by this method is more reasonable than the original shift-and-ratio method with much less computation time involved. We show the correctness of the MS&R method by comparing the Leff extracted with the channel length obtained by cross-sectional scanning capacitance microscopy (SCM) measurement. In addition, we show that a higher off current corresponds to a smaller Leff measured by our method.
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