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Abstract
The polycrystalline silicon thin film and gate oxide of poly-Si TFTs were treated by NH 3/N 2O plasma or their combination to improve the reliability of TFTs. The poly-Si TFTs with and without NH 3/N 2O plasma treatment were characterized by measuring the transfer curves of poly-Si TFTs. The results showed that the characteristics of poly-Si TFTs treated with NH 3/N 2O plasma were greatly improved at hot-carrier stress and thermal accelerated tests. The reason is that nitrogen atoms terminate the dangling bonds and improve the characteristics of poly-Si TFTs.
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