Abstract
The present work highlights the usefulness of underlap channel design in improving gain-bandwidth trade-off in analog circuit design. It is demonstrated that high values of intrinsic voltage gain (A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VO_OTA</sub> ) > 55 dB and unity gain frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T_OTA</sub> ) ~ 57 GHz of a folded cascode Operational transconductance Amplifier (OTA) can be achieved with gate-underlap channel design in 60 nm MOSFETs. These values correspond to a 15 dB improvement in A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VO_OTA</sub> and a 3 fold enhancement in f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T_OTA</sub> over a conventional non-underlap design. Gate-underlap OTA preserves functionality at high temperatures (550 K) by exhibiting high values of A <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">VO_OTA</sub> (42 dB) and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T_OTA</sub> (24 GHz). Results present new opportunities for low voltage analog circuit design with future technologies.
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