Abstract
Among the novel non-volatile memories, the electrochemical metallization (ECM)-type Resistive Random Access Memory (ReRAM) stands out from all the competitors. ECM-type memories use active metals as the electrode, such as copper. However, copper is hard to pattern by using dry etch. Therefore in this study, the copper chemical displacement technique (CDT) was applied to form the electrode of ReRAM device. We used CDT-Cu to solve the etch problem and improve the electric characteristics of device. The obtained results showed that samples using CDT-Cu exhibited lower set electric field than that of sample without CDT-Cu. The current density in the LRS, as well as operation electrical field, was also improved by CDT-Cu method. The retention of CDT-Cu sample can retain over 104 seconds.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
