Abstract
This paper reports a simple, cost-effective method using successive ionic layer adsorption and reaction (SILAR) in conjunction with dry etching for the fabrication of random GaP nanorods on a window layer of AlGaInP-based LEDs. The proposed method provides control over the size and density of the nanorods through the adjustment of ZnO nanomasks used in the SILAR process. Optimizing the nano-roughened morphology of a p-GaP surface provided a 78.34% increase in light output power, compared to an ordinary flat surface LED, without a significant degradation in electrical properties.
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