Abstract
In this article the optimization of a method to increase the photon capture efficiency of crystalline silicon (c-Si) wafers is presented. The method is based on metal assisted chemical etching (MACE) using hydrogen peroxide (H2O2) and hydrofluoric acid (HF) as etchants and silver atoms to catalyze the reaction. P-type monocrystalline silicon wafers were used, and different etching times and etchants’ concentrations were tested. Results proved the capability of MACE to reduce silicon’s effective reflectance to as low as 3.9%. A strong correlation of the etchants’ molar ratio with the obtained structures morphology and reflectance was also observed.
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