Improving FET Properties of Semiconducting Single-Walled Carbon Nanotubes by Selective Extraction

Abstract

A semiconducting single-walled carbon nano-tube (s-SWNT) FET was prepared using the simple technique of selective extraction. The Raman spectrum of the transistor reveals that the metallic SWNTs and regioregular poly(3-dodecylthiophene) were completely removed, leaving only s-SWNTs. The drain current–drain voltage ( $I_{D}$ – $V_{\mathrm {DS}})$ characteristics of an SWNT FET device in the dark were measured. The transistor fabricated by our selective extraction exhibits a high ON/OFF ratio of $10^{7}$ and a subthreshold swing of 154 mV/decade. The effective s-SWNT sorting process herein can be applied to further devices in the future.