Improving energy storage performance of BLLMT ceramic by doping BZT combining with defect engineering and film scraping process

Abstract

The (1-x)(Ba0.94Li0.02La0.04)(Mg0.04Ti0.96)O3-xBi(Zn1/2Ti1/2)O3 ((1-x)BLLMT-xBZT, x = 0.02, 0.04, 0.06, 0.08, 0.10, 0.12) ceramic thick films were prepared by traditional solid-state sintering method combined with film scraping process. Li+ and La3+ ions doping at A-site, and Mg2+ and Zn2+ ions doping at B-site of the perovskite structure, and adding BZT component enhance charge compensation, enlarge polarization difference, increase breakdown strength, and enhance relaxation degree, leading to the improved pulse charging and discharging energy storage performance of the BaTiO3-based ceramic films. The 0.92BLLMT-0.08BZT ceramic film has high discharge energy density of 4.61 J/cm3, high pulse power density PD = 224.14 MW/cm3, high current density CD = 896.58 A/cm2, high discharge speed of 234 ns, and high pulse discharge density Wd = 4.61 J/cm3 under 500 kV/cm combined with high breakdown strength of 500 kV/cm, relating to charge compensation, multiple ferroelectric phases coexistence, and formation of polar nanoregions. The strategy by equivalent and heterovalent ions doping at A-site and B-site of the perovskite structure and introducing Bi-based component combined with film scraping process strengthens charge compensation, enhances relaxation characteristic, and reduces grain size, providing an efficient route to develop prospect BT-based dielectric ceramic capacitors for potential application in high-power pulse energy storage such as 0.92BLLMT-0.08BZT.