Improving electrical performance of Cu∕porous ultra-low k dielectrics single damascene lines

Abstract

An additional dielectric barrier layer SiCN was deposited on the sidewalls prior to Ta(N) metal barrier deposition. It was found that the leakage decreased with three to four orders of magnitude and breakdown voltage increased 200% compared with that without SiCN layer after burn-in at 200°C for 40 h.