Abstract
In this work, a silicon-on-insulator (SOI) lateral diffused MOSFET (LDMOS) incorporated with sidewall field plate (SEP) is presented and investigated using three-dimensional numeric simulation. A new additional electric field peak is formed, due to the compound field plate established along the n-drift region. The lateral surface electric field can be modulated, which enhances the breakdown voltage. Meanwhile, the doping concentration of n-drift region is increased, which decreases the specific on-resistance. Compared with the superjunction LDMOS, a 23.7% increase in the breakdown voltage and a 21.7% decrease in the specific on-resistance are obtained in the SFP-LDMOS device.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
