Abstract
The breakdown mechanism of power bipolar static induction transistor (BSIT) with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological methods for improving high voltage performances are represented. The active region of BSIT is surrounded with a deep trench to avoid any probable influences of various defects on device performances. Two field-limiting ring-shape junctions and one channel termination ring-shape junction are arranged around the gate region to reduce the electric field intensity. The gate-source breakdown voltage BVGS of power BSIT has been increased to 110 V from previous value of 50–60 V, and its blocking voltage is increased to 1700 V. The optimal geometrical dimensions for achieving the maximum breakdown voltage BVGS and blocking voltage Vblock are also represented in the paper.
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