Improvements on modeling coupling effects of nonlinear-memory in SSPAs

Abstract

Efficient and accurate behavioral modeling of nonlinear memory effects are, nowadays, an integral part of the design process of modern communication systems. Notably, the nonlinear long-term memory effects occurring in solid state devices downgrade considerably system performances in presence of modulation signals. This paper presents an improved behavioral model for Solid State Power Amplifiers (SSPAs) used in communication systems design. This model, based on the compound dynamic Volterra structure, involves a true feedback loop, close to the actual mechanism, in order to efficiently handle the coupling effects of both short- and long-term memory occurring in semiconductor devices. The performance of the proposed model is verified through system-level simulations. This modeling technique is simple and enables a good prediction of nonlinear memory effects.