Abstract
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by high-temperature post-growth annealing is presented. The enhanced crystallinity and homogeneity of the MOCVD-grown h-BN films grown at 1050 °C is attributed to the solid-state atomic rearrangement during the thermal annealing at 1600 °C. In addition, the appearance of the photoluminescence by excitonic transitions as well as enlarged optical band gap were observed for the post-annealed h-BN films as direct consequences of the microstructural improvement. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards two-dimensional electronics and optoelectronics.
Highlights
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by hightemperature post-growth annealing is presented
We have demonstrated remarkable improvements in the crystallinity and the optical properties of the 2-inch wafer-scale h-BN film grown by MOCVD at 1050 °C by high-temperature (1500–1700 °C) post-growth annealing
After the post-annealing in a mixture of N2 and ammonia (NH3), which is used for the nitrogen source in the MOCVD h-BN growth, the E2g mode becomes weak and disappeared as the annealing temperature increases while Raman scattering of A1, E1, and E2 modes of aluminum nitride (AlN) appear and increase due to the nitration of the sapphire (Al2O3) substrate as shown in Supplementary Fig. S1
Summary
Remarkable improvements in both structural and optical properties of wafer-scale hexagonal boron nitride (h-BN) films grown by metal-organic chemical vapor deposition (MOCVD) enabled by hightemperature post-growth annealing is presented. The post-growth annealing is a very promising strategy to overcome limited crystallinity of h-BN films grown by typical MOCVD systems while maintaining their advantage of multiple wafer scalability for practical applications towards twodimensional electronics and optoelectronics. We have demonstrated remarkable improvements in the crystallinity and the optical properties of the 2-inch wafer-scale h-BN film grown by MOCVD at 1050 °C by high-temperature (1500–1700 °C) post-growth annealing. We believe that our results offer a promising and practical route for obtaining highly crystalline and multiple wafer-scale h-BN films for 2D electronic and optoelectronic devices
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