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Abstract
Improvements in optoelectrical properties of GaAsN are demonstrated by chemical beam epitaxy (CBE) growth on high-step-density GaAs substrates. The step density at the growing surface is controlled using 2, 4, and 10° off GaAs(001) wafers as substrates. The number of carrier scattering centers induced by N (SCN) in the grown GaAsN films is quantitatively evaluated from the temperature dependence of hole mobility and used as an indicator of film quality. In previous studies, SCN increased with increasing N composition independently of the growth technique used. By CBE with high-step-density substrates, the reduction in SCN is achieved. This method also improves the emission intensity of cathode luminescence.
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