Abstract
The magneto-optical Kerr effect of the HfO2/Co/HfO2/Al multilayer structure is investigated in this work, and an obvious cavity enhancement of the Kerr response for the HfO2 semiconductor is found both theoretically and experimentally Surprisingly, a maximum value of about −3° of the polar Kerr rotation for s-polarized incident light is observed in our experiment. We propose that this improvement on the Kerr effect can be attributed to the multiple reflection and optical interference in the cavity, which can also be proved by simulation using the finite element method.
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