Dc-electric-field-induced and low-frequency electromodulation second-harmonic generation spectroscopy ofSi(001)−SiO2interfaces

Abstract

The mechanism of dc-electric-field-induced second-harmonic (EFISH) generation at weakly nonlinear buried $\mathrm{Si}(001)\ensuremath{-}{\mathrm{SiO}}_{2}$ interfaces is studied experimentally in planar $\mathrm{Si}(001)\ensuremath{-}{\mathrm{SiO}}_{2}\ensuremath{-}\mathrm{Cr}$ MOS structures by optical second-harmonic generation spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon ${E}_{1}$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space-charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration, and oxide thickness on nonlocal screening of the dc-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green's-function formalism which takes into account all retardation and absorption effects of the fundamental and second-harmonic (SH) waves, and multiple reflection interference in the ${\mathrm{SiO}}_{2}$ layer. The optical interference between field-dependent and -independent contributions to the SH field is considered as an internal homodyne amplifier of the EFISH effects. Good agreement between the phenomenological model and our EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the $\mathrm{Si}\ensuremath{-}{\mathrm{SiO}}_{2}$ interface in silicon-based metal-oxide-semiconductor structures.