Improvement of Write Efficiency in Voltage-Controlled Spintronic Memory by development of a Ta−B Spin Hall Electrode

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Magnetic random-access memory (MRAM) using spin-transfer torque for write operations has been intensively developed as a technology for saving energy. The authors' recently presented voltage-controlled spintronic memory (VoCSM), which instead employs the spin Hall effect for writing, is here refined. High writing efficiency in VoCSM is achieved by means of an $a$-TaB/$\ensuremath{\beta}$-Ta spin Hall electrode, which features reduced write-current density, low write-error rate, strong durability, and high breakdown voltage. This improved VoCSM is seen as a path to high-density, high-speed nonvolatile memory with low power consumption.