Abstract
In this research, the thermal stability of pentacene-based organic FETs (OFETs) was investigated utilizing an amorphous rubrene (α-rubrene) passivation layer. Pentacene channel layers with a thickness of 10 nm were deposited at RT and at 100 °C. The influence of the α-rubrene passivation layer, which was in situ deposited on the pentacene at RT, was examined. The stability of the electrical characteristics and the crystallinity were compared with those after heating to 100 °C in air. For the pentacene deposited without an α-rubrene passivation layer, device performance was remarkably degraded after the heating process. On the other hand, the device characteristics of pentacene-based OFETs with an α-rubrene passivation layer were found to be stable after heating. Furthermore, the α-rubrene passivation layer stabilized the crystallinity of the pentacene layers during the heating process.
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