Abstract
The recoverable energy storage performance of 400 nm undoped and 4 mol. % Nb-doped PbZr0.4Ti0.6O3 ferroelectric capacitors was studied. The DC dielectric strength improved from 1351 kV/cm (undoped) to 1878 kV/cm (Nb-doped), and the latter capacitors had high recoverable energy storage density up to 20 J/cm3 with efficiency of 70%, benefiting mainly from the linear dielectric response. This study suggests that donor doping is an effective way to improve the dielectric strength and illustrates the significant role of the linear dielectric response in ferroelectrics for high power applications.
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