Improvement of the Light Output Power of GaN-Based Vertical Light Emitting Diodes by a Current Blocking Layer

Abstract

The light output characteristics of GaN-based vertical light emitting diodes (1 ×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO 2 current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90 × 10 -7 to 3.05 × 10 -7 A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA.